In a remarkable breakthrough, researchers have uncovered a unique mechanism of electric polarization via magnetic ordering in a novel mineral known as “MnBi2S4.” This discovery holds significant promise for energy-efficient data storage and represents a milestone in the field of magnetoelectric materials.
Magnetoelectric multiferroics, a rare class of materials capable of exhibiting both magnetism and ferroelectricity simultaneously, have long fascinated scientists for their potential applications in advanced technologies like spintronics and electronic memory devices. The discovery of materials with these dual properties is particularly valuable, offering unprecedented opportunities for enhancing device performance and energy efficiency.
Led by Professor A. Sundaresan from the Jawaharlal Nehru Centre for Advanced Scientific Research (JNCASR), the research team conducted a groundbreaking study published in the journal PHYSICAL REVIEW B. By employing high-resolution neutron diffraction techniques, they unveiled distinct magnetic structures in MnBi2S4, including a spin density wave, cycloidal, and helical spin structures. Importantly, they demonstrated that these spin structures induce ferroelectricity in the material, thereby establishing a strong coupling between magnetism and electric polarization.
Unlike previous studies that explored magnetoelectric coupling in materials with polar structures resulting from chemical ordering, Prof. Sundaresan’s study revealed that MnBi2S4, despite being centrosymmetric, undergoes magnetic ordering at low temperatures. Specifically, they observed magnetic transitions at temperatures of 27, 23, and 21.5 Kelvin, leading to the emergence of cycloidal and helical spin structures that break inversion symmetry and induce polarization.
According to Prof. Sundaresan, the significance of this discovery lies in the material’s unique mechanism of magnetoelectric coupling, driven by magnetic frustration. This breakthrough represents a crucial step towards understanding and harnessing the potential of magnetoelectric materials for diverse technological applications.
The findings of this study have profound implications for energy-efficient data storage, offering the possibility of manipulating spin using small electric fields. If MnBi2S4 can exhibit these phenomena at room temperature, it could revolutionize data storage by reducing energy consumption during writing processes. Moreover, these discoveries may facilitate the development of four-state logic memory systems, enhancing device performance compared to traditional binary logic systems.
Looking ahead, the researchers emphasize the need for further exploration of different materials and structures to uncover mechanisms that induce polarization and break inversion symmetry at room temperature. This ongoing research holds immense promise for advancing our understanding of magnetoelectric materials and unlocking their full potential in next-generation technologies.
The study was made possible with support from the Department of Science & Technology (DST), Government of India, and the Science and Technology Facility Council (STFC UK), among others, underscoring the collaborative efforts driving scientific progress in this field.
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